Thermal and Damp Heat Stability of High‐Mobility In<sub>2</sub>O<sub>3</sub>‐Based Transparent Conducting Films Fabricated at Low Process Temperatures
نویسندگان
چکیده
Transparent Conductive Oxide Polycrystalline In2O3:Me (Me: W, Ce) and solid-phase crystallized In2O3:Me,H films with high electron mobility can be fabricated at low process temperatures of ≈200 °C by ion plating DC arc discharge, known as high-density plasma enhanced evaporation or reactive deposition (RPD). More details found in article number 2000487 Takashi Koida Yuko Ueno.
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ژورنال
عنوان ژورنال: Physica Status Solidi A-applications and Materials Science
سال: 2021
ISSN: ['1862-6300', '1862-6319']
DOI: https://doi.org/10.1002/pssa.202170017